- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Qg - Gate Charge :
- Tradename :
29 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,900
In-stock
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Fairchild Semiconductor | MOSFET PT8 40/20V N-ch Dual Symmetric | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 20 A | 23 mOhms | 1.8 V | 7.6 nC | PowerTrench | |||||
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4,122
In-stock
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Fairchild Semiconductor | MOSFET -30V Dual | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 7 A | 23 mOhms | Enhancement | PowerTrench | ||||||
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6,286
In-stock
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Fairchild Semiconductor | MOSFET 30V Integrated N-Ch PT MOSFET-Schtky Dio | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7 A | 23 mOhms | Enhancement | PowerTrench | ||||||
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4,853
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 23 mOhms | Enhancement | PowerTrench | ||||||
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23,420
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 57A 23mOhm 86.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 86.7 nC | |||||||||
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2,663
In-stock
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Fairchild Semiconductor | MOSFET 100V 7.5a .22 Ohms/VGS=1V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7.5 A | 23 mOhms | Enhancement | UltraFET | ||||||
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6,518
In-stock
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Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 20 A | 23 mOhms | 3.1 V | 8 nC | PowerTrench | |||||
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1,807
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7 A | 23 mOhms | 3.1 V | 6.7 nC | PowerTrench | |||||
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1,901
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 80 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 23 mOhms | Enhancement | |||||||
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7,528
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.5 A | 23 mOhms | PowerTrench | |||||||
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80,000
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 41A 17.5mOhm 42nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 41 A | 23 mOhms | 42 nC | |||||||||
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1,416
In-stock
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Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 37 A | 23 mOhms | 3.1 V | 7.6 nC | PowerTrench | |||||
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4,429
In-stock
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onsemi | MOSFET 30V 7A N-Channel | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 23 mOhms | Enhancement | |||||||
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869
In-stock
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STMicroelectronics | MOSFET N Ch 100V 0.019Ohm 80A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 23 mOhms | Enhancement | |||||||
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2,710
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PwrTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 23 mOhms | Enhancement | PowerTrench | ||||||
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340
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 57A 23mOhm 86.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 4 V | 130 nC | ||||||
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1,230
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 48A 23mOhm 40nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 48 A | 23 mOhms | 40 nC | |||||||||
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296
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 57A 23mOhm 86.7nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 86.7 nC | |||||||||
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558
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 48A 23mOhm 40nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 48 A | 23 mOhms | 40 nC | |||||||||
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760
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 23mOhms 40nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 48 A | 23 mOhms | 40 nC | Enhancement | ||||||
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70
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 86.7 nC | Enhancement | ||||||
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10
In-stock
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IXYS | MOSFET Trench HiperFETs Power MOSFETs | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 23 mOhms | 5 V | 180 nC | Enhancement | HiPerFET | ||||
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2,026
In-stock
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Texas instruments | MOSFET 60-V Dual N-Channel Power MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 15 A | 23 mOhms | 3 V | 7.2 nC | NexFET | |||||
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1,160
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 86.7 nC | Enhancement | ||||||
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VIEW | IXYS | MOSFET 75 Amps 150V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 75 A | 23 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 200V 90A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 90 A | 23 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 100 Amps 200V 0.023 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 100 A | 23 mOhms | Enhancement | HyperFET | ||||||
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550
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 30A D2PAK-2 | 20 V | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 30 A | 23 mOhms | Enhancement | ||||||||
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102
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 23mOhms 40nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 48 A | 23 mOhms | 40 nC | Enhancement |