- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
- Tradename :
29 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,897
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Ch PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 28 A | 30 mOhms | Enhancement | PowerTrench | |||||
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6,303
In-stock
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IR / Infineon | MOSFET MOSFT 60V 7.6A 26mOhm 21nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 7.6 A | 30 mOhms | 21 nC | ||||||||
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3,270
In-stock
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onsemi | MOSFET NFET DPAK 100V 34A 37MO | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 30 mOhms | 2 V | 40 nC | |||||
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3,806
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 60 V, 19 mOhm typ., 24 A STripFE... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 24 A | 30 mOhms | 1 V | 26 nC | Enhancement | ||||
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9,067
In-stock
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Diodes Incorporated | MOSFET 30V Dual N-Ch Enh 22mOhm 10V 6.7A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6.7 A | 30 mOhms | 1.7 V | 6 nC | Enhancement | ||||
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2,241
In-stock
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Fairchild Semiconductor | MOSFET MV780/20V1000AMOSFET N-channelPowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 50 A | 30 mOhms | 2 V | 20 nC | Enhancement | ||||
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2,955
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 26mOhms 21nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 7.6 A | 30 mOhms | 21 nC | Enhancement | |||||
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4,177
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 7A 30mOhm 19nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.3 A | 30 mOhms | 1 V | 19 nC | |||||
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2,026
In-stock
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STMicroelectronics | MOSFET P-CH 30V 0.024Ohm 12A STripFET VI | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 30 mOhms | 2.5 V | 26 nC | |||||
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2,237
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6 A | 30 mOhms | 1 V | 12 nC | Enhancement | ||||
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5,891
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch 30mOhm 10V VGS 30V 6A | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6 A | 30 mOhms | 1.5 V | 11.4 nC | Enhancement | ||||
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19
In-stock
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IXYS | MOSFET 75 Amps 600V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 75 A | 30 mOhms | 3.9 V | 500 nC | Enhancement | CoolMOS | |||
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4,431
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 5.5 A | 30 mOhms | 1 V | 22.4 nC | Enhancement | ||||
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25
In-stock
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IXYS | MOSFET 85 Amps 600V 36 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 85 A | 30 mOhms | 4 V | 500 nC | Enhancement | CoolMOS | |||
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2,500
In-stock
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Diodes Incorporated | MOSFET 60V N-CH MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 30 mOhms | 1 V | 22.4 nC | Enhancement | ||||
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1,900
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | ATPAK-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 25 A | 30 mOhms | |||||||
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303
In-stock
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IXYS | MOSFET 44 Amps 100V 25.0 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 44 A | 30 mOhms | Enhancement | ||||||
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2,960
In-stock
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Nexperia | MOSFET PMV50ENEA/TO-236AB/REEL 7" Q3/ | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.9 A | 30 mOhms | 1 V | 10 nC | Enhancement | ||||
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878
In-stock
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Diodes Incorporated | MOSFET Dl 30V N-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 8.5 A | 30 mOhms | Enhancement | ||||||
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722
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 U-DFN2020-6 T&R 3K | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 5.3 A | 30 mOhms | 1 V | 22.4 nC | Enhancement | ||||
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31
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 600 V | 94 A | 30 mOhms | 3 V | 505 nC | Enhancement | |||||
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4,000
In-stock
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Fairchild Semiconductor | MOSFET N-Channel FET Enhancement Mode | 20 V | SMD/SMT | SOT-223-4 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.2 A | 30 mOhms | Enhancement | ||||||
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12,000
In-stock
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onsemi | MOSFET 30V 7A N-Channel | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7 A | 30 mOhms | Enhancement | ||||||
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3,000
In-stock
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Fairchild Semiconductor | MOSFET 30V Single N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.5 A | 30 mOhms | PowerTrench | ||||||
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VIEW | Diodes Incorporated | MOSFET N-Ch 30 Volt 18.4A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 18.4 A | 30 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 74 Amps 200V 0.03 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 74 A | 30 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 74 Amps 200V 0.03 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 74 A | 30 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 80 Amps 200V 0.03 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 80 A | 30 mOhms | Enhancement | HyperFET | |||||
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VIEW | Toshiba | MOSFET MOSFET P-Ch 40V 7.5A Rdson=0.03Ohm | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 7.5 A | 30 mOhms | Enhancement |
