- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,743
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 12 A | 6.4 mOhms | 43 nC | PowerTrench | ||||||
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1,755
In-stock
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onsemi | MOSFET MOSFET PCH 4V DRIVE SERIES | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 100 A | 6.4 mOhms | 280 nC | ||||||
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2,300
In-stock
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Diodes Incorporated | MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 13.5 A | 6.4 mOhms | 1 V | 41.3 nC | Enhancement | ||||
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463
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 6.4 mOhms | 2 V | 43 nC | Enhancement | PowerTrench | |||
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2,134
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 6.4 mOhms | Enhancement | OptiMOS | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 55V 0.0064 Ohm 90A STrip DeepGATE | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 90 A | 6.4 mOhms | 4 V | 90 nC |
