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10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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3,014
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 4.5A D2PAK-2 CoolMOS C3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS | |||||
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1,205
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 4.5A IPAK-3 CoolMOS C3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS | |||||
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1,980
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.4A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 950 mOhms | 13 nC | CoolMOS | |||||
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833
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.5A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS | |||||
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740
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 4.4A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 950 mOhms | CoolMOS | ||||||
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623
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 4.5A D2PAK-2 CoolMOS C3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS | |||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 4.5A TO220-3 CoolMOS C3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 4.5A D2PAK-2 CoolMOS S5 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS | |||||
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VIEW | IXYS | MOSFET 11 Amps 800V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 950 mOhms | Enhancement | HyperFET | |||||
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585
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 4.5A DPAK-2 CoolMOS S5 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS |