MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	DMN13H750S-7	1+ $0.530 10+ $0.434 100+ $0.265 1000+ $0.205 3000+ $0.174		PDF RFQ	1,401 In-stock	Diodes Incorporated	MOSFET N-Ch Enh Mode FET 130Vdss 20Vgss	20 V	SMD/SMT	SOT-23-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	130 V	1 A	410 mOhms	2 V	5.6 nC	Enhancement
	IPP60R450E6	1+ $1.650 10+ $1.410 100+ $1.130 500+ $0.982		PDF RFQ	490 In-stock	Infineon Technologies	MOSFET N-Ch 650V 9.2A TO220-3 CoolMOS E6	20 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	9.2 A	410 mOhms	2.5 V	28 nC	Enhancement	CoolMOS
	IPP60R450E6XKSA1	1+ $1.650 10+ $1.410 100+ $1.130 500+ $0.982		PDF RFQ	500 In-stock	Infineon Technologies	MOSFET N-Ch 650V 9.2A TO220-3 CoolMOS E6	20 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	9.2 A	410 mOhms	2.5 V	28 nC	Enhancement	CoolMOS

DMN13H750S-7

DMN13H750S-7

Diodes Incorporated

MOSFET N-Ch Enh Mode FET 130Vdss 20Vgss

Stock : 1,401

1+: $0.530

10+: $0.434

100+: $0.265

1000+: $0.205

3000+: $0.174

IPP60R450E6

IPP60R450E6

Infineon Technologies

MOSFET N-Ch 650V 9.2A TO220-3 CoolMOS E6

Stock : 490

1+: $1.650

10+: $1.410

100+: $1.130

500+: $0.982

IPP60R450E6XKSA1

IPP60R450E6XKSA1

Infineon Technologies

MOSFET N-Ch 650V 9.2A TO220-3 CoolMOS E6

Stock : 500

1+: $1.650

10+: $1.410

100+: $1.130

500+: $0.982

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