- Manufacture :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Qg - Gate Charge :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
384
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 195 mOhms | 3 V | 160 nC | Enhancement | SuperFET II | |||
|
|
VIEW | Infineon Technologies | MOSFET 100V DUAL N-CH HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 2.3 A | 195 mOhms | 3 V | 4.2 nC |
