- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
25,304
In-stock
|
Fairchild Semiconductor | MOSFET SSOT-3 N-CH 30V | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.9 A | 81 mOhms | Enhancement | ||||||
|
|
307
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 34.6A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 34.6 A | 81 mOhms | 2.1 V | 200 nC | Enhancement | CoolMOS | |||
|
|
30,420
In-stock
|
onsemi | MOSFET NFET DPAK 100V 19A 96MO | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 81 mOhms | 2 V to 4 V | 20 nC | |||||
|
|
89
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 34.6A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 34.6 A | 81 mOhms | 2.1 V | 200 nC | Enhancement | CoolMOS |
