- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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9,800
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1 MOhms | 1.2 V | 133 nC | Enhancement | |||||
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10,490
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1 MOhms | 1.2 V | 133 nC | Enhancement | OptiMOS | ||||
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4,630
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1 MOhms | 1 V | 168 nC | Enhancement | |||||
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16,180
In-stock
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STMicroelectronics | MOSFET N Ch 24V 0.8m 280A Pwr MOSFET | 20 V | SMD/SMT | PowerSO-10 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 24 V | 280 A | 1 MOhms | Enhancement | |||||||
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154
In-stock
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IXYS | MOSFET 550Amps 55V | 20 V | SMD/SMT | DE-475-6 | - 55 C | + 175 C | Tube | Si | N-Channel | 55 V | 550 A | 1 MOhms | 4 V | 595 nC | Enhancement | TrenchT2, GigaMOS | |||||
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1,631
In-stock
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IR / Infineon | MOSFET MOSFT 40V 380A 1.4mOhm 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 380 A | 1 MOhms | 120 nC | Enhancement | ||||||
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872
In-stock
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Infineon Technologies | MOSFET MOSFET N-CH 40V 240A D2PAK-7 | 20 V | SMD/SMT | TO-263-7 | Reel | 1 Channel | Si | N-Channel | 40 V | 240 A | 1 MOhms | 3 V | 210 nC | Enhancement | StrongIRFET | ||||||
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3,470
In-stock
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Toshiba | MOSFET N-CH Mosfet 30V 150A 8DSOP | 20 V | SMD/SMT | DSOP-Advance-8 | - | - | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 1 MOhms | 1.3 V | 74 nC | Enhancement | |||||
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3,000
In-stock
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Fairchild Semiconductor | MOSFET 25V N-Channel PowerTrench | 20 V | SMD/SMT | Power-56-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 32 A | 1 MOhms | 1.6 V | 85 nC | PowerTrench SyncFET | |||||||
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1,176
In-stock
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Infineon Technologies | MOSFET Auto 40V N-Ch FET 1.3mOhm 195A | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 240 A | 1 MOhms | 2.2 V to 3.9 V | 210 nC | Enhancement | CoolIRFet | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1 MOhms | 1 V | 168 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1mOhm | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 1 MOhms | 220 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 170 A | 1 MOhms | 1.2 V | 82 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 170 A | 1 MOhms | 1 V to 2 V | 82 nC | Enhancement | OptiMOS |