- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Channel Mode :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,645
In-stock
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IXYS | MOSFET 0.2 A 500V 30 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | - | - | Depletion | |||
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320
In-stock
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IXYS | MOSFET 0.6 Amps 1200V 32 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 600 mA | 30 Ohms | Enhancement | |||||
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238
In-stock
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IXYS | MOSFET 0.2 Amps 500V 30 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | - | - | Depletion | |||
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62
In-stock
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IXYS | MOSFET 0.6 Amps 1200V 32 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 600 mA | 30 Ohms | Enhancement | |||||
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50
In-stock
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IXYS | MOSFET 0.2 Amps 500V 30 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | Depletion | |||||
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161
In-stock
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IXYS | MOSFET 0.2 Amps 500V 30 Rds | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | Depletion | |||||
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VIEW | IXYS | MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on) | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 500 mA | 30 Ohms | 4 V | 8.1 nC | Enhancement |
