- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 1 MOhms (1)
- 1.3 mOhms (2)
- 1.4 mOhms (1)
- 1.4 Ohms (1)
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- 176 mOhms (1)
- 2.3 mOhms (1)
- 2.406 Ohms (2)
- 2.7 mOhms (2)
- 25 Ohms (4)
- 28 Ohms (2)
- 3.2 mOhms (1)
- 3.4 mOhms (1)
- 3.7 mOhms (1)
- 4.6 mOhms (3)
- 45 mOhms (1)
- 46 mOhms (1)
- 49 mOhms (2)
- 5 Ohms (1)
- 5.3 mOhms (1)
- 5.8 mOhms (1)
- 5.9 mOhms (1)
- 560 uOhms (1)
- 7.5 mOhms (1)
- 72 mOhms (1)
- 8 mOhms (1)
- 80 mOhms (1)
- 9.3 mOhms (1)
- Qg - Gate Charge :
-
- 1 nC (1)
- 10 nC (1)
- 10.3 nC (1)
- 13.2 nC (1)
- 139 nC (1)
- 14 nC (1)
- 14.9 nC (1)
- 15 nC (1)
- 15..2 nC (1)
- 18.6 nC (1)
- 19 nC (1)
- 19.3 nC (1)
- 2.8 nC (1)
- 22.2 nC (2)
- 25.1 nC (1)
- 26 nC (1)
- 30 nC (2)
- 36 nC (1)
- 37.56 nC (1)
- 4.8 nC (1)
- 45.2 nC (2)
- 5.6 nC (2)
- 5.8 nC (2)
- 6.6 nC (4)
- 600 pC (2)
- 74 nC (1)
- 8.3 nC (1)
- 9.2 nC (1)
- 98 nC (2)
39 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
8,972
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 78A 3.4MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 78 A | 2.7 mOhms | 1.3 V | 30 nC | Enhancement | ||||
|
|
4,500
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 138A 2.1MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 136 A | 1.5 mOhms | 1.3 V | 45.2 nC | Enhancement | ||||
|
|
5,475
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 5.8 A | 45 mOhms | 1.3 V | 37.56 nC | Enhancement | ||||
|
|
8,073
In-stock
|
Nexperia | MOSFET PMV55ENEA/TO-236AB/REEL 7" Q3/ | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3.1 A | 46 mOhms | 1.3 V | 19 nC | Enhancement | ||||
|
|
2,766
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 120mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 120 mA | 25 Ohms | 1.3 V | 6.6 nC | Enhancement | ||||
|
|
25,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 90mA SOT-89-3 | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 90 mA | 28 Ohms | 1.3 V | 5.8 nC | Enhancement | ||||
|
|
4,102
In-stock
|
onsemi | MOSFET Pwr MOSFET 30V 65A 4.2mOhm SGL N-CH | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 67 A | 3.4 mOhms | 1.3 V | 36 nC | Enhancement | ||||
|
|
2,777
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 120mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 120 mA | 25 Ohms | 1.3 V | 6.6 nC | Enhancement | ||||
|
|
39,900
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 69A 4MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 69 A | 3.2 mOhms | 1.3 V | 26 nC | Enhancement | ||||
|
|
1,490
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 78A 3.4MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21.7 A | 2.7 mOhms | 1.3 V | 14 nC | Enhancement | ||||
|
|
4,441
In-stock
|
onsemi | MOSFET Pwr MOSFET 30V 38A 9.4mOhm SGL N-CH | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 38 A | 7.5 mOhms | 1.3 V | 15..2 nC | Enhancement | ||||
|
|
1,815
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 4.5A TSOP-6 | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.5 A | 49 mOhms | 1.3 V | 5.6 nC | Enhancement | ||||
|
|
6,493
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.406 Ohms | 1.3 V | 600 pC | Enhancement | ||||
|
|
1,494
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 120mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 120 mA | 25 Ohms | 1.3 V | 6.6 nC | Enhancement | ||||
|
|
25,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 90mA SOT-89-3 | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 90 mA | 28 Ohms | 1.3 V | 5.8 nC | Enhancement | ||||
|
|
3,854
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.406 Ohms | 1.3 V | 600 pC | Enhancement | ||||
|
|
2,821
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 46A 6.96MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 46 A | 5.8 mOhms | 1.3 V | 18.6 nC | Enhancement | ||||
|
|
1,734
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vdss 1.5W | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.3 A | 8 mOhms | 1.3 V | 25.1 nC | Enhancement | ||||
|
|
7,608
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNALN-CH | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5 Ohms | 1.3 V | 1 nC | Enhancement | ||||
|
|
1,500
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 138A 2.1MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 159 A | 1.4 mOhms | 1.3 V | 45.2 nC | Enhancement | ||||
|
|
1,193
In-stock
|
onsemi | MOSFET NFET U8FL 30V 47A 7.4MOHM | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 47 A | 5.9 mOhms | 1.3 V | 19.3 nC | Enhancement | ||||
|
|
2,720
In-stock
|
Nexperia | MOSFET PMV230ENEA/TO-236AB/REEL 7" Q3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.5 A | 176 mOhms | 1.3 V | 4.8 nC | Enhancement | ||||
|
|
2,160
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 120mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 120 mA | 25 Ohms | 1.3 V | 6.6 nC | Enhancement | ||||
|
|
2,371
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 52A 5.8MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 52 A | 4.6 mOhms | 1.3 V | 22.2 nC | Enhancement | ||||
|
|
1,500
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 52A 5.8MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 52 A | 4.6 mOhms | 1.3 V | 22.2 nC | Enhancement | ||||
|
|
1,990
In-stock
|
Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET 8-VSON-CLI... | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.3 mOhms | 1.3 V | 98 nC | Enhancement | ||||
|
|
2,474
In-stock
|
Texas instruments | MOSFET 30V,NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 3.7 mOhms | 1.3 V | 13.2 nC | NexFET | ||||
|
|
3,470
In-stock
|
Toshiba | MOSFET N-CH Mosfet 30V 150A 8DSOP | 20 V | SMD/SMT | DSOP-Advance-8 | - | - | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 1 MOhms | 1.3 V | 74 nC | Enhancement | ||||
|
|
2,057
In-stock
|
Texas instruments | MOSFET 30V,NCh NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 4.6 mOhms | 1.3 V | 10 nC | NexFET | ||||
|
|
2,422
In-stock
|
Texas instruments | MOSFET 30V,NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 5.3 mOhms | 1.3 V | 8.3 nC | NexFET |
