- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 1.05 Ohms (2)
- 1.2 mOhms (1)
- 1.45 mOhms (1)
- 1.7 mOhms (1)
- 1.9 mOhms (1)
- 13 mOhms (2)
- 2.2 mOhms (1)
- 2.2 Ohms (2)
- 2.8 Ohms (2)
- 2.9 mOhms (1)
- 24 mOhms (1)
- 3 Ohms (1)
- 3.2 Ohms (1)
- 3.5 mOhms (1)
- 3.8 mOhms (1)
- 4 mOhms (1)
- 4.7 Ohms (1)
- 500 mOhms (1)
- 6.3 mOhms (1)
- 6.5 mOhms (1)
- 610 uOhms (1)
- 7.9 mOhms (1)
- 8.1 Ohms (1)
- 8.7 mOhms (1)
- 840 uOhms (1)
- 890 mOhms (1)
- Tradename :
30 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,847
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 13 mOhms | 1.1 V | 35 nC | Enhancement | OptiMOS | |||
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26,510
In-stock
|
Nexperia | MOSFET 60V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 330 mA | 3.2 Ohms | 1.1 V | 1 nC | Enhancement | ||||
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2,471
In-stock
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Diodes Incorporated | MOSFET 30V N-CH MOSFET | 20 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.2 A | 24 mOhms | 1.1 V | 13.2 nC | Enhancement | ||||
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VIEW | Nexperia | MOSFET NX7002BKM/XQFN3/REEL 7" Q1/T1 | 20 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 350 mA | 2.2 Ohms | 1.1 V | 1 nC | Enhancement | ||||
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11,215
In-stock
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Nexperia | MOSFET NX7002AK/TO-236AB/REEL 11" Q3/ | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 mA | 3 Ohms | 1.1 V | 430 pC | Enhancement | ||||
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240
In-stock
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Nexperia | MOSFET NX7002BKMB/XQFN3/REEL 7" Q1/T1 | 20 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 350 mA | 2.2 Ohms | 1.1 V | 1 nC | Enhancement | ||||
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4,918
In-stock
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Toshiba | MOSFET N-Ch 30V 5800pF 81nC 280A 132W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 280 A | 610 uOhms | 1.1 V | Enhancement | ||||||
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3,000
In-stock
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Toshiba | MOSFET N-Ch 30V 2940pF 50nC 134A 90W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 134 A | 2.2 mOhms | 1.1 V | 50 nC | Enhancement | |||||
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333
In-stock
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Toshiba | MOSFET N-Ch 30V 2970pF 41nC 33A 30W | 20 V | SMD/SMT | TSON-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 188 A | 1.2 mOhms | 1.1 V | 41 nC | Enhancement | |||||
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4,775
In-stock
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Toshiba | MOSFET Small Low ON Resistane MOSFETs | 20 V | SMD/SMT | UDFN6B-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 6.5 mOhms | 1.1 V | 7.5 nC | Enhancement | |||||
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2,637
In-stock
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Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 1.45 mOhms | 1.1 V | 49 nC | Enhancement | NexFET | |||
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8,840
In-stock
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Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 4 mOhms | 1.1 V | 35 nC | Enhancement | NexFET | |||
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8,688
In-stock
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Toshiba | MOSFET 30 Volt N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 890 mOhms | 1.1 V | 110 nC | Enhancement | ||||
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30,000
In-stock
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Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 2.9 mOhms | 1.1 V | 53 nC | Enhancement | NexFET | |||
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48,990
In-stock
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Texas instruments | MOSFET CSD17579Q3A 30 V 8-VSONP | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 8.7 mOhms | 1.1 V | 15 nC | Enhancement | NexFET | |||
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27,280
In-stock
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Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.9 mOhms | 1.1 V | 30 nC | Enhancement | NexFET | |||
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2,528
In-stock
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Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 3.5 mOhms | 1.1 V | 35 nC | Enhancement | NexFET | |||
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30,000
In-stock
|
Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.7 mOhms | 1.1 V | 68 nC | Enhancement | ||||
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723
In-stock
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Texas instruments | MOSFET CSD17578Q3A 30 V 8-VSONP | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 6.3 mOhms | 1.1 V | 22.2 nC | Enhancement | NexFET | |||
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860
In-stock
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Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 7.9 mOhms | 1.1 V | 7.9 nC | Enhancement | ||||
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9,228
In-stock
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Toshiba | MOSFET Small-signal MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 8.1 Ohms | 1.1 V | 0.27 nC | Enhancement | ||||
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6,000
In-stock
|
Toshiba | MOSFET Small-signal Nch MOSFET ID:0.4A | 20 V | SMD/SMT | SOT-346-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 1.05 Ohms | 1.1 V | 600 pC | Enhancement | |||||
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2,889
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | 20 V | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 170 mA | 4.7 Ohms | 1.1 V | Enhancement | |||||||
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4,970
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 13 mOhms | 1.1 V | 35 nC | Enhancement | ||||
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1,500
In-stock
|
Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 840 uOhms | 1.1 V | 64 nC | Enhancement | ||||
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60,000
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID 0.4A, VDSS 30V | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 400 mA | 500 mOhms | 1.1 V | Enhancement | |||||
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10,000
In-stock
|
Toshiba | MOSFET Small-signal Nch MOSFET | 20 V | SMD/SMT | CST3-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 1.05 Ohms | 1.1 V | 600 pC | Enhancement | |||||
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10,000
In-stock
|
Toshiba | MOSFET Small-signal MOSFET VDSS=60V, ID=0.15A | 20 V | SMD/SMT | CST3C-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 150 mA | 2.8 Ohms | 1.1 V | 350 pC | Enhancement | |||||
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6,000
In-stock
|
Toshiba | MOSFET Small-signal Nch MOSFET ID: 0.15A | 20 V | SMD/SMT | SOT-416-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 170 mA | 2.8 Ohms | 1.1 V | 350 pC | Enhancement | |||||
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1,490
In-stock
|
onsemi | MOSFET NFET U8FL 25V 66A 4.8MOHM | 20 V | SMD/SMT | WDFN-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 66 A | 3.8 mOhms | 1.1 V | 12.4 nC | Enhancement |
