- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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183
In-stock
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IXYS | MOSFET 62 Amps 150V 0.04 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 62 A | 33 mOhms | 5.5 V | 70 nC | Enhancement | PolarHT | |||
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30
In-stock
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IXYS | MOSFET 24 Amps 1000V | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 400 mOhms | 5.5 V | 267 nC | Enhancement | ||||
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54
In-stock
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IXYS | MOSFET 75 Amps 100V 0.025 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | 5.5 V | 74 nC | Enhancement | PolarHT | |||
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35
In-stock
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IXYS | MOSFET 75 Amps 100V 0.025 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | 5.5 V | 74 nC | Enhancement | PolarHT | |||
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32
In-stock
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IXYS | MOSFET 42 Amps 250V 0.084 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 42 A | 84 mOhms | 5.5 V | 70 nC | Enhancement | PolarHT | |||
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29
In-stock
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IXYS | MOSFET 42 Amps 250V 0.084 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 42 A | 84 mOhms | 5.5 V | 70 nC | Enhancement | PolarHT |
