- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,691
In-stock
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STMicroelectronics | MOSFET P-Ch 60V 0.15Ohm 10A pwr MOSFET | 20 V | Through Hole | TO-220-3 | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 180 mOhms | 4 V | 7 nC | ||||||
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3,880
In-stock
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STMicroelectronics | MOSFET P-Ch 60 V, 0.13 Ohm 3 A STripFET VI | 20 V | SMD/SMT | SOT-223-3 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 160 mOhms | 4 V | 6.4 nC | |||||||
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383
In-stock
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STMicroelectronics | MOSFET P-Ch 60V 0.15Ohm 10A STripFET VI DeepGate | 20 V | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 180 mOhms | 4 V | 7 nC | ||||||
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622
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 266 mOhms | 4 V | 120 nC | Enhancement | ||||
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683
In-stock
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onsemi | MOSFET PCH 1.8A 60V 4V DRIV | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.8 A | 250 mOhms | 4 V | 120 nC | Enhancement | ||||
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144,000
In-stock
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onsemi | MOSFET SINGLE P-CHANNEL S08FL 60V 69A 1 | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 64 A | 14 mOhms | 4 V | 120 nC | Enhancement |