- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,015
In-stock
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STMicroelectronics | MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 4 V | 65 nC | ||||||
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2,903
In-stock
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STMicroelectronics | MOSFET STripFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 80 A | 8.5 mOhms | 4 V | 33.5 nC | Enhancement | |||||
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85
In-stock
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IXYS | MOSFET Standard Linear Power MOSFETs | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 200 V | 80 A | 32 mOhms | 4 V | 180 nC | Enhancement | Linear | |||||
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832
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 7.34 mOhms | 4 V | 56 nC | ||||||
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651
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 7.34 mOhms | 4 V | 56 nC | ||||||
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2,500
In-stock
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STMicroelectronics | MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 4 V | 65 nC | ||||||
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890
In-stock
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STMicroelectronics | MOSFET N-Ch 40V 3.5m Ohm 80A STripFET VI | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.3 mOhms | 4 V | 65 nC | Enhancement |