- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,058
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 10 mOhms | 4 V | 44 nC | Enhancement | OptiMOS | |||
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306
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 90A 4.5mOhm 180nC Qg | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 90 A | 4.5 mOhms | 4 V | 180 nC | |||||
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1,383
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 4.1 mOhms | 4 V | 33 nC | Enhancement | OptiMOS | |||
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106
In-stock
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IXYS | MOSFET 90 Amps 55V 0.0084 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 90 A | 7 mOhms | 4 V | 42 nC | Enhancement | TrenchT2 | |||
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10
In-stock
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IXYS | MOSFET 90 Amps 300V 0.033 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 90 A | 33 mOhms | 4 V | 360 nC | Enhancement | HyperFET | |||
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VIEW | STMicroelectronics | MOSFET N-Ch 55V 0.0064 Ohm 90A STrip DeepGATE | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 90 A | 6.4 mOhms | 4 V | 90 nC |
