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Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Qg - Gate Charge :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
IRFP048NPBF
1+
$1.700
10+
$1.440
100+
$1.160
500+
$1.010
RFQ
2,247
In-stock
Infineon Technologies MOSFET 55V 1 N-CH HEXFET 16mOhms 59.3nC 20 V Through Hole TO-247-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 55 V 64 A 16 mOhms 4 V 89 nC Enhancement
TPN7R506NH,L1Q
1+
$0.930
10+
$0.750
100+
$0.576
500+
$0.509
5000+
$0.356
RFQ
6,192
In-stock
Toshiba MOSFET U-MOSVIII-H 30V 53A 24nC MOSFET 20 V SMD/SMT TSON-Advance-8     Reel 1 Channel Si N-Channel 60 V 53 A 16 mOhms 4 V 22 nC Enhancement
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