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Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
FDPF085N10A
1+
$2.830
10+
$2.400
100+
$1.920
500+
$1.680
RFQ
913
In-stock
Fairchild Semiconductor MOSFET 100V N-CHANNEL POWERTRENCH MOSFET 20 V Through Hole TO-220FP-3     Tube 1 Channel Si N-Channel 100 V 40 A 6.5 mOhms 4 V 31 nC   PowerTrench
IRF3205ZSTRLPBF
1+
$1.530
10+
$1.310
100+
$1.010
500+
$0.886
800+
$0.699
RFQ
1,492
In-stock
Infineon Technologies MOSFET MOSFT 55V 110A 6.5mOhm 76nC Qg 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 55 V 110 A 6.5 mOhms 4 V 76 nC    
AUIRF3205ZSTRL
1+
$2.420
10+
$2.060
100+
$1.650
500+
$1.440
800+
$1.200
RFQ
801
In-stock
Infineon Technologies MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 55 V 44 A 6.5 mOhms 4 V 76 nC Enhancement  
IRF3205ZLPBF
1+
$1.420
10+
$1.210
100+
$0.929
500+
$0.821
RFQ
3,200
In-stock
IR / Infineon MOSFET 55V 1 N-CH HEXFET 6.5mOhms 76nC 20 V Through Hole TO-262-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 55 V 110 A 6.5 mOhms 4 V 76 nC Enhancement  
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