- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,040
In-stock
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IR / Infineon | MOSFET MOSFT 40V 195A 1.7mOhm 160nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 340 A | 1.4 mOhms | 4 V | 160 nC | ||||
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1,145
In-stock
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IR / Infineon | MOSFET MOSFT 40V 162A 4mOhm 160nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 162 A | 3.5 mOhms | 4 V | 160 nC | ||||
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490
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 13mOhms 106.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 82 A | 13 mOhms | 4 V | 160 nC | Enhancement | |||
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1,000
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 2.6mOhms 160nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 260 A | 2.1 mOhms | 4 V | 160 nC | ||||
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800
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 280 A | 2 mOhms | 4 V | 160 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 235 A | 2.4 mOhms | 4 V | 160 nC | Enhancement | |||
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VIEW | IR / Infineon | MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 235 A | 2.4 mOhms | 4 V | 160 nC | Enhancement |
