- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,420
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET PWR MOSFET200mOhms | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 200 mOhms | 4 V | 17 nC | Enhancement | ||||
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1,224
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 100 V | 3.2 A | 92 mOhms | 4 V | 17 nC | Enhancement |