- Mounting Style :
- Minimum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
-
- - 10 A (2)
- 100 A (1)
- 106 A (1)
- 110 A (2)
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- 120 A (8)
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- 14 A (1)
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- 71 A (1)
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- 75 A (1)
- 77 A (2)
- 8.7 A (1)
- 80 A (6)
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- 85 A (1)
- 86 A (1)
- 88 A (2)
- 9.4 A (1)
- 90 A (3)
- 94 A (1)
- 98 A (2)
- Rds On - Drain-Source Resistance :
-
- 1 MOhms (1)
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- 11 mOhms (3)
- 11.1 mOhms (1)
- 115 mOhms (1)
- 12 mOhms (3)
- 12.6 mOhms (1)
- 125 mOhms (1)
- 13 mOhms (1)
- 13.6 mOhms (1)
- 13.9 mOhms (1)
- 14 mOhms (3)
- 14.5 mOhms (3)
- 15.8 mOhms (4)
- 150 mOhms (1)
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- 180 mOhms (2)
- 2 mOhms (2)
- 2.1 mOhms (1)
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- 2.4 mOhms (7)
- 2.6 mOhms (1)
- 2.67 mOhms (1)
- 2.7 mOhms (3)
- 2.8 mOhms (2)
- 20 mOhms (1)
- 210 mOhms (1)
- 22 mOhms (2)
- 22.5 mOhms (1)
- 23 mOhms (1)
- 24 mOhms (1)
- 26 mOhms (1)
- 26.5 mOhms (1)
- 27 mOhms (1)
- 28.5 mOhms (1)
- 3.2 mOhms (2)
- 3.3 mOhms (7)
- 3.5 mOhms (4)
- 3.7 mOhms (1)
- 3.8 mOhms (1)
- 3.9 mOhms (1)
- 32 mOhms (1)
- 34 mOhms (1)
- 39 mOhms (1)
- 4 mOhms (2)
- 4.1 mOhms (2)
- 4.2 mOhms (1)
- 4.3 mOhms (1)
- 4.5 mOhms (1)
- 4.7 mOhms (3)
- 40 mOhms (2)
- 44 mOhms (2)
- 45 mOhms (1)
- 5 mOhms (1)
- 5.3 mOhms (3)
- 5.4 mOhms (1)
- 5.5 mOhms (3)
- 5.6 mOhms (1)
- 5.7 mOhms (1)
- 5.8 mOhms (1)
- 52 mOhms (1)
- 6.1 mOhms (1)
- 6.5 mOhms (3)
- 6.8 mOhms (1)
- 62 mOhms (1)
- 650 Ohms (1)
- 7 mOhms (3)
- 7.34 mOhms (2)
- 7.5 mOhms (2)
- 7.7 mOhms (1)
- 75 mOhms (3)
- 8 mOhms (1)
- 8.5 mOhms (2)
- 800 Ohms (1)
- 82 mOhms (1)
- 9 mOhms (2)
- 9.4 mOhms (1)
- 9.6 mOhms (1)
- 9.8 mOhms (1)
- 90 mOhms (1)
- 97 mOhms (1)
- Qg - Gate Charge :
-
- 100 nC (3)
- 109 nC (2)
- 112 nC (2)
- 120 nC (6)
- 130 nC (4)
- 140 nC (2)
- 143 nC (2)
- 150 nC (3)
- 156 nC (1)
- 160 nC (7)
- 170 nC (5)
- 180 nC (2)
- 183 nC (1)
- 190 nC (2)
- 20 nC (2)
- 200 nC (2)
- 22 nC (4)
- 220 nC (1)
- 25 nC (1)
- 270 nC (2)
- 28 nC (2)
- 29 nC (4)
- 30 nC (1)
- 300 nC (2)
- 31 nC (2)
- 33 nC (1)
- 33.5 nC (1)
- 34 nC (4)
- 36 nC (1)
- 37 nC (4)
- 39 nC (3)
- 40 nC (2)
- 42 nC (2)
- 420 nC (1)
- 43 nC (2)
- 430 nC (2)
- 44 nC (1)
- 47.3 nC (1)
- 49 nC (1)
- 51 nC (1)
- 53 nC (1)
- 54 nC (1)
- 545 nC (1)
- 56 nC (2)
- 58 nC (3)
- 59 nC (2)
- 595 nC (1)
- 6.9 nC (1)
- 63 nC (1)
- 65 nC (4)
- 68.6 nC (1)
- 69 nC (2)
- 7 nC (2)
- 71 nC (1)
- 73.3 nC (1)
- 74 nC (1)
- 74.9 nC (1)
- 75 nC (1)
- 76 nC (5)
- 77 nC (1)
- 78 nC (1)
- 79 nC (1)
- 8.3 nC (1)
- 81 nC (1)
- 82 nC (2)
- 85 nC (2)
- 89 nC (2)
- 90 nC (3)
- 94 nC (1)
- 95 nC (1)
140 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
12,000
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 4 V | 100 nC | |||||
|
|
2,460
In-stock
|
Fairchild Semiconductor | MOSFET 100V NCh PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 32 mOhms | 4 V | 53 nC | Enhancement | PowerTrench | |||
|
|
2,173
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 20 mOhms | 4 V | 31 nC | Enhancement | OptiMOS | |||
|
|
1,025
In-stock
|
Fairchild Semiconductor | MOSFET PT7 60V 4.1MOHM TO-220F | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 77 A | 4.1 mOhms | 4 V | 69 nC | PowerTrench | |||||
|
|
3,143
In-stock
|
Fairchild Semiconductor | MOSFET TO-leadless, PT8,40V 300A, 0.76mOhm | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 300 A | 650 Ohms | 4 V | 220 nC | Enhancement | PowerTrench | |||
|
|
4,351
In-stock
|
Infineon Technologies | MOSFET 100V SINGLE N-CH 28.5mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 35 A | 22.5 mOhms | 4 V | 39 nC | |||||
|
|
436
In-stock
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 2.1mOhms 200nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 293 A | 1.5 mOhms | 4 V | 200 nC | |||||
|
|
3,298
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 10mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 88 A | 8 mOhms | 4 V | 120 nC | Enhancement | ||||
|
|
1,015
In-stock
|
STMicroelectronics | MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 4 V | 65 nC | |||||
|
|
4,074
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 83A 12mOhm 86.6nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 84 A | 12 mOhms | 4 V | 130 nC | |||||
|
|
2,691
In-stock
|
STMicroelectronics | MOSFET P-Ch 60V 0.15Ohm 10A pwr MOSFET | 20 V | Through Hole | TO-220-3 | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 180 mOhms | 4 V | 7 nC | ||||||
|
|
20,000
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 14.5mOhms 29nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 59 A | 14.5 mOhms | 4 V | 29 nC | Enhancement | ||||
|
|
2,635
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.1 A | 18 mOhms | 4 V | 69 nC | Enhancement | ||||
|
|
1,040
In-stock
|
IR / Infineon | MOSFET MOSFT 40V 195A 1.7mOhm 160nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 340 A | 1.4 mOhms | 4 V | 160 nC | |||||
|
|
4,700
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 27 A | 45 mOhms | 4 V | 34 nC | Enhancement | ||||
|
|
3,815
In-stock
|
Infineon Technologies | MOSFET 80V 1 N-CH HEXFET 29mOhms 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 38 A | 24 mOhms | 4 V | 37 nC | Enhancement | ||||
|
|
1,816
In-stock
|
Infineon Technologies | MOSFET MOSFET, 100V, 64A, 1 50 nC Qg, TO-262 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 61 A | 13.9 mOhms | 4 V | 58 nC | Enhancement | ||||
|
|
2,247
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 16mOhms 59.3nC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 64 A | 16 mOhms | 4 V | 89 nC | Enhancement | ||||
|
|
4,084
In-stock
|
IR / Infineon | MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 62 A | 12.6 mOhms | 4 V | 89 nC | Enhancement | ||||
|
|
2,258
In-stock
|
IR / Infineon | MOSFET MOSFT 55V 51A 13.9mOhm 29nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 51 A | 11.1 mOhms | 4 V | 29 nC | |||||
|
|
956
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 160 A | 5.3 mOhms | 4 V | 120 nC | |||||
|
|
1,457
In-stock
|
Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 4 V | 85 nC | |||||
|
|
10,760
In-stock
|
IR / Infineon | MOSFET 100V 170A 4.7 mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 4.7 mOhms | 4 V | 143 nC | |||||
|
|
4,809
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.7 A | 150 mOhms | 4 V | 6.9 nC | Enhancement | ||||
|
|
154
In-stock
|
IXYS | MOSFET 550Amps 55V | 20 V | SMD/SMT | DE-475-6 | - 55 C | + 175 C | Tube | Si | N-Channel | 55 V | 550 A | 1 MOhms | 4 V | 595 nC | Enhancement | TrenchT2, GigaMOS | ||||
|
|
2,903
In-stock
|
STMicroelectronics | MOSFET STripFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 80 A | 8.5 mOhms | 4 V | 33.5 nC | Enhancement | ||||
|
|
2,409
In-stock
|
IR / Infineon | MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 43 A | 15.8 mOhms | 4 V | 22 nC | Enhancement | ||||
|
|
1,216
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 135A 4.7mOhm 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 135 A | 4.7 mOhms | 4 V | 150 nC | |||||
|
|
3,560
In-stock
|
IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 14 A | 8.5 mOhms | 4 V | 51 nC | Enhancement | ||||
|
|
1,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 2.4 mOhms | 4 V | 183 nC | Enhancement |
