- Mounting Style :
- Package / Case :
-
- DirectFET-MZ (2)
- DualCool-56-8 (1)
- H2PAK-2 (1)
- H2PAK-6 (1)
- Power-33-8 (1)
- Power-56-8 (2)
- PQFN-8 (5)
- SO-8 (6)
- SO-FL-8 (1)
- SOIC-8 (1)
- SOP-Advance-8 (3)
- SOT-223-3 (2)
- SOT-223-4 (3)
- SOT-227-4 (2)
- SOT-23-3 (2)
- SOT-89-3 (1)
- TDSON-8 (1)
- TO-220-3 (5)
- TO-247-3 (2)
- TO-252-3 (3)
- TO-262-3 (1)
- TO-264-3 (1)
- TO-268-3 (1)
- TO-39-3 (1)
- TSON-Advance-8 (4)
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 1.8 A (1)
- - 2.5 A (1)
- - 3 A (1)
- - 64 A (1)
- 0.25 A (2)
- 1 A (1)
- 1.6 A (1)
- 10 A (1)
- 100 A (1)
- 13 A (3)
- 136 A (1)
- 16 A (1)
- 17 A (1)
- 18 A (2)
- 2.5 A (1)
- 2.7 A (1)
- 2.8 A (1)
- 20 A (1)
- 200 A (1)
- 200 mA (1)
- 25 A (2)
- 3 A (1)
- 3.2 A (1)
- 3.4 A (1)
- 3.5 A (1)
- 3.6 A (1)
- 33 A (1)
- 340 A (1)
- 36 A (1)
- 40 A (1)
- 47 A (1)
- 5.1 A (1)
- 500 mA (1)
- 52 A (1)
- 55 A (1)
- 6 A, -4.5 A (1)
- 6.2 A (1)
- 6.4 A (1)
- 65 A (1)
- 7.5 A (1)
- 71 A (1)
- 8 A (1)
- 80 A (1)
- 85 A (1)
- 89 A (1)
- 9.9 A (1)
- 90 A (2)
- Rds On - Drain-Source Resistance :
-
- 1.1 mOhms (1)
- 10 mOhms (1)
- 10 Ohms (1)
- 12 mOhms (1)
- 120 mOhms (1)
- 122 mOhms (1)
- 125 mOhms (2)
- 13 mOhms (1)
- 14 mOhms (1)
- 14.4 mOhms (1)
- 15 mOhms (1)
- 15 Ohms (2)
- 150 mOhms (1)
- 156 mOhms (1)
- 160 mOhms (1)
- 168 mOhms (2)
- 17.3 mOhms (1)
- 180 mOhms (1)
- 200 mOhms (1)
- 250 mOhms (1)
- 266 mOhms (1)
- 29 mOhms (1)
- 3.8 mOhms (1)
- 30 mOhms (1)
- 30 Ohms (1)
- 31 mOhms (1)
- 32 mOhms (1)
- 33 mOhms (1)
- 34 mOhms (1)
- 350 mOhms (1)
- 39 mOhms, 65 mOhms (1)
- 4 mOhms (1)
- 5.9 mOhms (1)
- 50 mOhms (2)
- 56.3 mOhms (1)
- 6.7 mOhms (1)
- 60 mOhms (1)
- 60 Ohms (1)
- 7.2 mOhms (1)
- 7.65 mOhms (1)
- 73 mOhms (1)
- 75 mOhms (1)
- 83 mOhms (1)
- 9 Ohms (1)
- 9.6 mOhms (2)
- 92 mOhms (1)
- 96 mOhms (2)
- Qg - Gate Charge :
-
- 12.2 nC (1)
- 120 nC (7)
- 14.4 nC (1)
- 15 nC (1)
- 16 nC (1)
- 17 nC (2)
- 180 nC (3)
- 19 nC (1)
- 22 nC (1)
- 23 nC (1)
- 25 nC (1)
- 255 nC (1)
- 28.51 nC (1)
- 29 nC (1)
- 29.3 nC (1)
- 3 nC (2)
- 32 nC (1)
- 33 nC (1)
- 360 nC (1)
- 39 nC (1)
- 4.7 nC (1)
- 4.9 nC (3)
- 40 nC (2)
- 44 nC (1)
- 490 nC (1)
- 5.4 nC (1)
- 500 nC (1)
- 55 nC (1)
- 65 nC (1)
- 7 nC (7)
- 8.1 nC (1)
- 81 nC (1)
- 9 nC (1)
- 9.6 nC (1)
53 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
7,069
In-stock
|
IR / Infineon | MOSFET 150V 1 N-CH HEXFET 34.5mOhms 39nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 6.2 A | 29 mOhms | 4 V | 39 nC | Enhancement | Directfet | |||
|
|
368
In-stock
|
IXYS | MOSFET HiperFET Pwr MOSFET 70V, 340A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 70 V | 340 A | 4 mOhms | 4 V | 490 nC | Enhancement | HyperFET | |||
|
|
6,560
In-stock
|
Fairchild Semiconductor | MOSFET 100V PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 16 A | 122 mOhms | 4 V | 14.4 nC | |||||
|
|
3,081
In-stock
|
Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 20 A | 56.3 mOhms | 4 V | 4.9 nC | PowerTrench | ||||
|
|
7,061
In-stock
|
Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 52 A | 15 mOhms | 4 V | 33 nC | PowerTrench | ||||
|
|
2,447
In-stock
|
Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 7.5 A | 17.3 mOhms | 4 V | 16 nC | PowerTrench | ||||
|
|
10,792
In-stock
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 14.4 mOhms | 4 V | 23 nC | |||||
|
|
2,469
In-stock
|
Infineon Technologies | MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 55 A | 12 mOhms | 4 V | 22 nC | Enhancement | Directfet | |||
|
|
4,058
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 10 mOhms | 4 V | 44 nC | Enhancement | OptiMOS | |||
|
|
3,282
In-stock
|
IR / Infineon | MOSFET MOSFT 150V 5A 44mOhm 25nC Qg | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 5.1 A | 34 mOhms | 4 V | 25 nC | |||||
|
|
3,610
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.4 A | 83 mOhms | 4 V | 3 nC | PowerTrench | ||||
|
|
1,903
In-stock
|
IR / Infineon | MOSFET MOSFT DUAL NCh 80V 3.6A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 80 V | 3.6 A | 73 mOhms | 4 V | 15 nC | |||||
|
|
1,355
In-stock
|
Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 13 A | 7.65 mOhms | 4 V | 55 nC | PowerTrench | |||||
|
|
552
In-stock
|
IR / Infineon | MOSFET 75V 1 N-CH HEXFET 5.9mOhms 65nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 17 A | 5.9 mOhms | 4 V | 65 nC | Enhancement | ||||
|
|
85
In-stock
|
IXYS | MOSFET Standard Linear Power MOSFETs | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 200 V | 80 A | 32 mOhms | 4 V | 180 nC | Enhancement | Linear | ||||
|
|
3,399
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 31mOhms 19.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 33 A | 31 mOhms | 4 V | 29 nC | Enhancement | ||||
|
|
688
In-stock
|
Fairchild Semiconductor | MOSFET 120V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 65 A | 9.6 mOhms | 4 V | 32 nC | PowerTrench | ||||
|
|
1,420
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET PWR MOSFET200mOhms | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 200 mOhms | 4 V | 17 nC | Enhancement | ||||
|
|
1,224
In-stock
|
IR / Infineon | MOSFET PLANAR_MOSFETS | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 100 V | 3.2 A | 92 mOhms | 4 V | 17 nC | Enhancement | |||||
|
|
866
In-stock
|
Diodes Incorporated | MOSFET N-Chan 100V MOSFET (UMOS) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 6.4 A | 125 mOhms | 4 V | 9.6 nC | Enhancement | ||||
|
|
24
In-stock
|
IXYS | MOSFET 47 Amps 600V 70 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 60 mOhms | 4 V | 255 nC | Enhancement | CoolMOS | |||
|
|
24
In-stock
|
IXYS | MOSFET 25 Amps 800V | 20 V | SMD/SMT | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 25 A | 125 mOhms | 4 V | 180 nC | Enhancement | CoolMOS | |||
|
|
25
In-stock
|
IXYS | MOSFET 85 Amps 600V 36 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 85 A | 30 mOhms | 4 V | 500 nC | Enhancement | CoolMOS | |||
|
|
2,098
In-stock
|
Diodes Incorporated | MOSFET N-Chan 100V MOSFET (UMOS) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.5 A | 350 mOhms | 4 V | 5.4 nC | Enhancement | ||||
|
|
2,778
In-stock
|
onsemi | MOSFET NFET SOT223 600V 6A 15OHM | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 0.25 A | 15 Ohms | 4 V | 4.9 nC | Enhancement | ||||
|
|
775
In-stock
|
Infineon Technologies | MOSFET Automotive MOSFET 55V, 1.9A, 160 mOhm | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 2.7 A | 160 mOhms | 4 V | 7 nC | |||||
|
|
723
In-stock
|
onsemi | MOSFET NCH+PCH 4.5V DRIVE | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, -30 V | 6 A, -4.5 A | 39 mOhms, 65 mOhms | 4 V | 120 nC | Enhancement | ||||
|
|
557
In-stock
|
Infineon Technologies | MOSFET N and P-Ch 60V 3A, -2A DSO-8 | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V | 3 A | 120 mOhms | 4 V | 3 nC | Enhancement | SIPMOS | |||
|
|
50
In-stock
|
IXYS | MOSFET 25 Amps 800V 0.15 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 25 A | 150 mOhms | 4 V | 180 nC | Enhancement | CoolMOS, ISOPLUS | |||
|
|
5,380
In-stock
|
onsemi | MOSFET PCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2.5 A | 156 mOhms | 4 V | 120 nC | Enhancement |
