- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Channel Mode :
- Tradename :
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14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,500
In-stock
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onsemi | MOSFET T6D3F 40V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 185 A | 1.4 mOhms | 2.5 V | 47 nC | Enhancement | ||||
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1,030
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 92 A | 9.25 mOhms | 4 V | 47 nC | PowerTrench | ||||||
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9,552
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 85A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 85 A | 4.2 mOhms | 1.2 V | 47 nC | Enhancement | OptiMOS | |||
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1,500
In-stock
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onsemi | MOSFET T6-D3F 40V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 185 A | 1.4 mOhms | 2.5 V | 47 nC | Enhancement | ||||
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492
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 79A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 79 A | 3 mOhms | 47 nC | Enhancement | OptiMOS | ||||
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2,134
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 85A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 85 A | 4.2 mOhms | 1.2 V | 47 nC | Enhancement | OptiMOS | |||
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536
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -15A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 200 mOhms | 47 nC | Enhancement | SIPMOS | ||||
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1,121
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.1 A | 25 mOhms | - 2.1 V | 47 nC | Enhancement | ||||
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30
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1700 V | 1 A | 16 Ohms | 47 nC | Depletion | ||||||
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3,000
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Chan SyncFET PowerTrench | 20 V | SMD/SMT | Power-33-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 2.5 mOhms | 1.6 V | 47 nC | SyncFET | ||||||
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2,665
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET DIRECTFET MX | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 30 V | 32 A | 1.8 mOhms | 47 nC | ||||||||
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440
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A TO220-3 OptiMOS-T2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 7.9 mOhms | 2 V | 47 nC | Enhancement | OptiMOS | |||
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1,074
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 7.6 mOhms | 2 V | 47 nC | Enhancement | OptiMOS | |||
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GET PRICE |
38,000
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.1 mOhms | 2 V | 47 nC | Enhancement |
