- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,135
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
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11,151
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 20.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.7 A | 190 mOhms | 3 V | 87 nC | CoolMOS | ||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | ||||
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615
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 44 A | 36 mOhms | 2 V | 87 nC | Enhancement | ||||
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446
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
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469
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
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767
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 71 A | 6.6 mOhms | 2.1 V | 87 nC | Enhancement | StrongIRFET |
