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31 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
50,000
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | |||
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GET PRICE |
15,988
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 30 A | 25.8 mOhms | 1.2 V | 31 nC | Enhancement | OptiMOS | |||
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3,588
In-stock
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Fairchild Semiconductor | MOSFET PT7 N-ch 80/20V Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 48 A | 8.5 mOhms | 2 V | 31 nC | PowerTrench Power Clip | |||||
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2,173
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 20 mOhms | 4 V | 31 nC | Enhancement | OptiMOS | ||||
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4,625
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | ||||
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50,000
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | ||||
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3,400
In-stock
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IR / Infineon | MOSFET 1 P-CH -55V HEXFET 105mOhms 31nC | 20 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 14 A | 170 mOhms | - 1 V | 31 nC | Enhancement | |||||
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5,686
In-stock
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IR / Infineon | MOSFET 30V 1 P-CH HEXFET 105mOhms 31nC | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | |||||
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2,523
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||
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1,141
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||
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1,198
In-stock
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Fairchild Semiconductor | MOSFET 25V NChan Dual Cool PowerTrench SyncFET | 20 V | SMD/SMT | DualCool-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 24 A | 3.5 mOhms | 1.7 V | 31 nC | PowerTrench SyncFET | |||||
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703
In-stock
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Fairchild Semiconductor | MOSFET 100V N-CHANNEL POWERTRENCH MOSFET | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 96 A | 7.35 mOhms | 4 V | 31 nC | ||||||||
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913
In-stock
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Fairchild Semiconductor | MOSFET 100V N-CHANNEL POWERTRENCH MOSFET | 20 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 40 A | 6.5 mOhms | 4 V | 31 nC | PowerTrench | |||||||
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4,264
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.2 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | ||||
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2,667
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET PWR MOSFET 3.8mOhms | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.8 mOhms | 1.8 V | 31 nC | Enhancement | |||||
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833
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | ||||
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46,200
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | |||||
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1,551
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.6 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | ||||
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8,900
In-stock
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IR / Infineon | MOSFET 30V SINGLE N-CH 4.1mOhms 14nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 6.3 mOhms | 1.8 V | 31 nC | ||||||
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2,050
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.2 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | ||||
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450
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16.8 A | 207 mOhms | 3.5 V | 31 nC | Enhancement | CoolMOS | ||||
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432
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16.8 A | 207 mOhms | 3.5 V | 31 nC | Enhancement | CoolMOS | ||||
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168
In-stock
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Infineon Technologies | MOSFET 80V 1 N-CH HEXFET 15mOhms 31nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 80 V | 9.2 A | 15 mOhms | 31 nC | Enhancement | ||||||
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4,017
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 55A 31nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 55 A | 6.1 mOhms | 2 V to 4 V | 31 nC | Enhancement | |||||
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8,000
In-stock
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IR / Infineon | MOSFET MOSFT 80V 9.2A 15mOhm 31nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 9.2 A | 15 mOhms | 31 nC | |||||||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 30 A | 25.8 mOhms | 1.2 V | 31 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.6 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | ||||
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8,404
In-stock
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IR / Infineon | MOSFET 30V 1 P-CH HEXFET 105mOhms 31nC | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | |||||
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1,960
In-stock
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IR / Infineon | MOSFET 55V SINGLE N-CH 13.6mOhms 31nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.6 mOhms | 4 V | 31 nC | Enhancement | |||||
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1,012
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 6.6mOhms 31nC | 20 V | SMD/SMT | SO-8 | Tube | Si | P-Channel | - 30 V | - 16 A | 10.2 mOhms | 31 nC |