- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,967
In-stock
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Infineon Technologies | MOSFET MOSFT 25V 57A 8.7mOhm 6.8nC LogLvl | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 57 A | 10.6 mOhms | 1.9 V | 6.8 nC | ||||
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2,343
In-stock
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Diodes Incorporated | MOSFET PMOS-DUAL | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 6.9 A | 45 mOhms | - 2.1 V | 6.8 nC | Enhancement | |||
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1,658
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4 Ohms | 600 mV | 6.8 nC | Enhancement | |||
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2,644
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4 Ohms | 600 mV | 6.8 nC | Enhancement | |||
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2,879
In-stock
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onsemi | MOSFET DIODES | 20 V | SMD/SMT | SOT-26-6 | Reel | 1 Channel | Si | N-Channel | 60 V | 3.5 A | 132 mOhms | 6.8 nC | |||||||
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5,515
In-stock
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onsemi | MOSFET NCH 3.5A 60V 117MOHM CPH6 | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3.5 A | 92 mOhms | 1.2 V | 6.8 nC | Enhancement | |||
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537
In-stock
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IR / Infineon | MOSFET MOSFT 57A 8.7mOhm 25V 6.8nC Qg log lvl | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 25 V | 57 A | 12.9 mOhms | 6.8 nC | |||||||
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22
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 8.7mOhms 6.8nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 25 V | 57 A | 12.9 mOhms | 1.35 V to 2.35 V | 6.8 nC | Enhancement |
