- Manufacture :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
21,735
In-stock
|
Infineon Technologies | MOSFET N-Ch 20V 2.3A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.3 A | 41 mOhms | 550 mV | 1.7 nC | Enhancement | ||||
|
|
1,780
In-stock
|
Fairchild Semiconductor | MOSFET 100V Dual N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 2.7 A | 105 mOhms | 3 V | 1.7 nC | PowerTrench | ||||
|
|
4,353
In-stock
|
Toshiba | MOSFET Small Signal Mosfet | 20 V | SOT-23-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 3 A | 140 mOhms | 2.5 V | 1.7 nC | Enhancement |
