- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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50,000
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 17.5 mOhms | 6.2 nC | ||||||
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24,232
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 14.2 mOhms | 1.8 V | 6.2 nC | |||
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5,974
In-stock
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Fairchild Semiconductor | MOSFET 30V P-CH. FET, 80 MO, SSOT3 | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 125 mOhms | - 1.9 V | 6.2 nC | |||
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1,206
In-stock
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IR / Infineon | MOSFET 30V SINGLE N-CH 11.9mOhms 6.2nC | 20 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | N-Channel | 30 V | 11 A | 17.5 mOhms | 6.2 nC |
