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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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23,420
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 57A 23mOhm 86.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 86.7 nC | ||||||
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2,020
In-stock
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IR / Infineon | MOSFET MOSFT 55V 72A 12mOhm 86.7nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 72 A | 12 mOhms | 86.7 nC | ||||||
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1,000
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 44A 12mOhm 86.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 44 A | 12 mOhms | 86.7 nC | ||||||
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296
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 57A 23mOhm 86.7nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 86.7 nC | ||||||
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70
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 86.7 nC | Enhancement | |||
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1,160
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 86.7 nC | Enhancement |
