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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,880
In-stock
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IR / Infineon | MOSFET MOSFT 100V 15A 115mOhm 29.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 115 mOhms | 29.3 nC | |||||||
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546
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 11A 110mOhm 29.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 11 A | 110 mOhms | 29.3 nC | |||||||
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161
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 115mOhms 29.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 15 A | 115 mOhms | 29.3 nC | Enhancement | ||||
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1,335
In-stock
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STMicroelectronics | MOSFET N-CH 1500V 6Ohm 2.5A PowerMESH | 20 V | SMD/SMT | H2PAK-2 | - 50 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1500 V | 2.5 A | 9 Ohms | 4 V | 29.3 nC | ||||
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2,000
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 115mOhms 29.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 115 mOhms | 29.3 nC | Enhancement |
