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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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2,714
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | 21.3 nC | Enhancement | ||||
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2,242
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 110mOhms 21.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | 21.3 nC | Enhancement | |||
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1,975
In-stock
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IR / Infineon | MOSFET MOSFT PCh -55V -18A 110mOhm 21.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | 21.3 nC | ||||||
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404
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -55V -18A 110mOhm 21.3nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | 21.3 nC |
