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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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26,900
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 39A 36mOhm 73.3nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 39 A | 36 mOhms | 73.3 nC | ||||||
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1,747
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 42A 36mOhm 73.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 36 mOhms | 73.3 nC | |||||||
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407
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Infineon Technologies | MOSFET MOSFT 100V 42A 36mOhm 73.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 42 A | 36 mOhms | 73.3 nC | |||||||
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897
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Infineon Technologies | MOSFET MOSFT 60V 72A 12mOhm 73.3nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 72 A | 12 mOhms | 4 V | 73.3 nC | ||||
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170
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 36mOhms 73.3 nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 42 A | 36 mOhms | 73.3 nC | Enhancement |
