- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
130
In-stock
|
IXYS | MOSFET Linear L2 Pwr MOSFET w/Extended FBSOA | 20 V | Chassis Mount | SOT-227-4 | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 178 A | 11 mOhms | |||||||
|
92
In-stock
|
IXYS | MOSFET 100V 200A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 5.4 mOhms | ||||||
|
68
In-stock
|
IXYS | MOSFET 200 Amps 100V 0.0075 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 7.5 mOhms | Enhancement | HyperFET | ||||
|
10
In-stock
|
IXYS | MOSFET 230 Amps 100V 0.006 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 230 A | 6.5 mOhms | Enhancement | HyperFET | ||||
|
VIEW | IXYS | MOSFET 180 Amps 100V 0.008 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 8 mOhms | Enhancement | HyperFET | ||||
|
VIEW | IXYS | MOSFET 170 Amps 100V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 10 mOhms | Enhancement | HyperFET | ||||
|
VIEW | IXYS | MOSFET 150 Amps 100V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 150 A | 12 mOhms | Enhancement |