- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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73
In-stock
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IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 192 A | 14.5 mOhms | 268 nC | Enhancement | HyperFET | ||||
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20
In-stock
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IXYS | MOSFET 140 Amps 300V 0.024 Ohm Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 115 A | 24 mOhms | Enhancement | HyperFET | |||||
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20
In-stock
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IXYS | MOSFET 138 Amps 300V 0.018 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 300 V | 138 A | 18 mOhms | 4.5 V | 258 nC | Enhancement | Polar, HiPerFET | |||
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15
In-stock
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IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 300V 130A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 130 A | 19 mOhms | 5 V | 335 nC | Enhancement | GigaMOS | |||
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20
In-stock
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IXYS | MOSFET 102 Amps 300V 0.033 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 86 A | 33 mOhms | 5 V | 224 nC | Enhancement | PolarHV, HiPerFET | |||
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10
In-stock
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IXYS | MOSFET 90 Amps 300V 0.033 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 90 A | 33 mOhms | 4 V | 360 nC | Enhancement | HyperFET | |||
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VIEW | IXYS | MOSFET 300V 73A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 73 A | 45 mOhms | Enhancement | HyperFET |
