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48 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | |
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46,129
In-stock
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Fairchild Semiconductor | MOSFET N-CHANNEL 60V 200mA | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | Enhancement | |||||
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7,752
In-stock
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Diodes Incorporated | MOSFET P-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 140 mA | 20 Ohms | Enhancement | |||||
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9,090
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | Enhancement | |||||
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6,534
In-stock
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Diodes Incorporated | MOSFET N-Chnl 200V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 200 V | 120 mA | 15 Ohms | Enhancement | |||||
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6,724
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 320 mA | 4 Ohms | Enhancement | |||||
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6,198
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 1.1 A | 450 mOhms | Enhancement | |||||
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5,913
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 320 mA | 4.5 Ohms | Enhancement | |||||
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3,687
In-stock
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Diodes Incorporated | MOSFET N-Chnl 450V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 450 V | 90 mA | 50 Ohms | Enhancement | |||||
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3,881
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 900 mA | 650 mOhms | Enhancement | |||||
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22,748
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel Sm Sig | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | ||||||
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14,712
In-stock
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Fairchild Semiconductor | MOSFET N-Channel MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.2 Ohms | Enhancement | |||||
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16,109
In-stock
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Fairchild Semiconductor | MOSFET N-Channel MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 400 mA | 2 Ohms | Enhancement | |||||
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3,328
In-stock
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Diodes Incorporated | MOSFET P-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 60 V | - 160 mA | 14 Ohms | Enhancement | |||||
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53,920
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 450 mA | 2 Ohms | Enhancement | |||||
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2,737
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 270 mA | 5 Ohms | Enhancement | |||||
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3,486
In-stock
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Diodes Incorporated | MOSFET P-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 60 V | - 280 mA | 5 Ohms | Enhancement | |||||
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2,842
In-stock
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Diodes Incorporated | MOSFET Avalanche | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | Enhancement | |||||
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4,971
In-stock
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Diodes Incorporated | MOSFET N-Chnl 200V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 180 mA | 10 Ohms | Enhancement | |||||
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3,805
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 320 mA | 4.5 Ohms | Enhancement | |||||
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1,725
In-stock
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Diodes Incorporated | MOSFET P-Chnl 450V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 50 mA | 150 Ohms | Enhancement | |||||
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11,914
In-stock
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Fairchild Semiconductor | MOSFET N-CHANNEL 60V 200mA | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | Enhancement | |||||
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3,160
In-stock
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Fairchild Semiconductor | MOSFET N-CHANNEL 60V 200mA | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | Enhancement | |||||
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7,611
In-stock
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Fairchild Semiconductor | MOSFET N-Ch Enhancement Mode Field Effect | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.2 Ohms | Enhancement | |||||
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3,564
In-stock
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Fairchild Semiconductor | MOSFET N-Ch Enhancement Mode Field Effect | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.2 Ohms | Enhancement | |||||
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2,769
In-stock
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Diodes Incorporated | MOSFET N Chnl. 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 270 mA | 7.5 Ohms | Enhancement | |||||
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1,339
In-stock
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Diodes Incorporated | MOSFET P-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 230 mA | 8 Ohms | Enhancement | |||||
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3,580
In-stock
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Fairchild Semiconductor | MOSFET N-Ch Enhancement Mode Field Effect | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 400 mA | 2 Ohms | Enhancement | |||||
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3,048
In-stock
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Fairchild Semiconductor | MOSFET N-Ch Enhancement Mode Field Effect | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.2 Ohms | Enhancement | |||||
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2,366
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 320 mA | 4 Ohms | Enhancement | |||||
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1,731
In-stock
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Diodes Incorporated | MOSFET Avalanche | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | 3 V | Enhancement |