- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 10 mOhms (1)
- 100 mOhms (3)
- 12 mOhms (1)
- 12.5 mOhms (1)
- 120 mOhms (1)
- 130 mOhms (2)
- 150 mOhms (1)
- 160 mOhms (2)
- 165 mOhms (1)
- 17 mOhms (1)
- 18 mOhms (1)
- 180 mOhms (1)
- 22 mOhms (1)
- 22.5 mOhms (1)
- 23 mOhms (1)
- 24 mOhms (2)
- 240 mOhms (1)
- 250 mOhms (2)
- 27 mOhms (1)
- 28 mOhms (1)
- 30 mOhms (1)
- 300 mOhms (2)
- 320 mOhms (1)
- 33 mOhms (1)
- 330 mOhms (1)
- 390 mOhms (1)
- 420 mOhms (1)
- 45 mOhms (1)
- 450 mOhms (1)
- 47 mOhms (1)
- 500 mOhms (1)
- 6 mOhms (2)
- 60 mOhms (1)
- 650 mOhms (1)
- 700 mOhms (1)
- 8 mOhms (1)
- 90 mOhms (2)
46 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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221
In-stock
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IXYS | MOSFET 140 Amps 300V 0.024 Ohms Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 140 A | 24 mOhms | Enhancement | HyperFET | |||||
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40
In-stock
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IXYS | MOSFET DIODE Id44 BVdass600 | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 44 A | 130 mOhms | Enhancement | HyperFET | |||||
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2,800
In-stock
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IXYS | MOSFET 140 Amps 200V 0.018 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 140 A | 18 mOhms | Enhancement | HyperFET | |||||
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9
In-stock
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IXYS | MOSFET 120 Amps 250V 0.024 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 24 mOhms | Enhancement | HyperFET | |||||
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20
In-stock
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IXYS | MOSFET 800V 34A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 34 A | 240 mOhms | Enhancement | HyperFET | |||||
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25
In-stock
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IXYS | MOSFET 100V 180A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 8 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | 4.5 V | 170 nC | Enhancement | HyperFET | |||
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40
In-stock
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IXYS | MOSFET DIODE Id48 BVdass500 | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 48 A | 100 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 600V 36A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 180 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 180 Amps 70V 0.006 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 70 V | 180 A | 6 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 1KV 24A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 390 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 170 Amps 100V | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 10 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 100 Amps 100V 0.012 Ohm Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 12 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 500V 55A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 55 A | 90 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 48 Amps 500V 0.1 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 48 A | 100 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 70V 110A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 70 V | 110 A | 6 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 21 Amps 1000V 0.5 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 21 A | 500 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 200V 120A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 120 A | 17 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 32 Amps 600V | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 32 A | 250 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 300V 73A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 73 A | 45 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 200V 90A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 90 A | 23 mOhms | Enhancement | HyperFET | |||||
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8,600
In-stock
|
IXYS | MOSFET 800V 27A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 300 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 34 Amps 1000V 0.28W Rds | 20 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 300 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 50 Amps 500V 0.1 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 50 A | 100 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 25 Amps 900V 0.33 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 25 A | 330 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 33 Amps 500V 0.16 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 33 A | 160 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 15 Amps 1000V 0.725 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 28 Amps 600V 0.25 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 250 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 48 Amps 500V 0.1 Rds | 20 V | SMD/SMT | TO-264-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 48 A | 90 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 150 Amps 150V 0.0125 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 12.5 mOhms | Enhancement | HyperFET |
