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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXTK82N25P
1+
$6.000
10+
$5.500
100+
$5.000
RFQ
8,000
In-stock
IXYS MOSFET 82 Amps 250V 0.035 Rds 20 V Through Hole TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 250 V 82 A 35 mOhms 5 V 142 nC Enhancement PolarHT
IXTK180N15P
1+
$10.520
10+
$9.670
25+
$9.270
100+
$8.170
RFQ
59
In-stock
IXYS MOSFET 180 Amps 150V 0.01 Ohm Rds 20 V Through Hole TO-264-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 150 V 180 A 10 mOhms 5 V 240 nC Enhancement PolarHT
IXTK102N30P
1+
$11.610
10+
$10.500
25+
$10.010
100+
$8.690
RFQ
47
In-stock
IXYS MOSFET 102 Amps 300V 0.033 Rds 20 V Through Hole TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 300 V 102 A 33 mOhms 5 V 224 nC Enhancement PolarHT
IXTK150N15P
1+
$9.570
10+
$8.650
25+
$8.250
100+
$7.160
RFQ
46
In-stock
IXYS MOSFET 150 Amps 150V 0.013 Rds 20 V Through Hole TO-264-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 150 V 150 A 13 mOhms 5 V 190 nC Enhancement PolarHT
IXTK120N25P
1+
$11.610
10+
$10.500
25+
$10.010
100+
$8.690
RFQ
10
In-stock
IXYS MOSFET 120 Amps 250V 0.024 Rds 20 V Through Hole TO-264-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 250 V 120 A 24 mOhms 5 V 185 nC Enhancement PolarHT
IXTK200N10P
25+
$10.010
100+
$8.690
250+
$8.300
500+
$7.570
VIEW
RFQ
IXYS MOSFET 200 Amps 100V 0.0075 Rds 20 V Through Hole TO-264-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 200 A 7.5 mOhms 5 V 240 nC Enhancement PolarHT
IXTK120N20P
25+
$8.250
100+
$7.160
250+
$6.840
500+
$6.240
VIEW
RFQ
IXYS MOSFET 120 Amps 200V 0.022 Rds 20 V Through Hole TO-264-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 200 V 120 A 22 mOhms 5 V 152 nC Enhancement PolarHT
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