- Manufacture :
- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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- 73 A (1)
- 75 A (1)
- 80 A (3)
- 82 A (1)
- 85 A (1)
- 88 A (2)
- 90 A (4)
- 94 A (1)
- Rds On - Drain-Source Resistance :
-
- 10 mOhms (1)
- 100 mOhms (3)
- 11 mOhms (1)
- 12 mOhms (2)
- 12.5 mOhms (1)
- 12.9 mOhms (1)
- 120 mOhms (1)
- 125 mOhms (1)
- 13 mOhms (1)
- 130 mOhms (2)
- 15 mOhms (1)
- 150 mOhms (1)
- 16 mOhms (1)
- 160 mOhms (3)
- 165 mOhms (1)
- 17 mOhms (2)
- 170 mOhms (1)
- 180 mOhms (1)
- 19 mOhms (1)
- 20 mOhms (2)
- 22 mOhms (1)
- 22.5 mOhms (1)
- 23 mOhms (1)
- 230 mOhms (1)
- 24 mOhms (3)
- 240 mOhms (1)
- 250 mOhms (2)
- 26 mOhms (1)
- 27 mOhms (2)
- 28 mOhms (1)
- 30 mOhms (3)
- 300 mOhms (2)
- 320 mOhms (1)
- 33 mOhms (4)
- 330 mOhms (1)
- 35 mOhms (2)
- 350 mOhms (1)
- 390 mOhms (1)
- 40 mOhms (2)
- 42 mOhms (1)
- 420 mOhms (1)
- 44 mOhms (1)
- 45 mOhms (2)
- 450 mOhms (1)
- 47 mOhms (1)
- 500 mOhms (1)
- 550 mOhms (1)
- 6 mOhms (2)
- 60 mOhms (1)
- 650 mOhms (1)
- 700 mOhms (1)
- 8 mOhms (1)
- 9 mOhms (1)
- 90 mOhms (2)
77 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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95
In-stock
|
IXYS | MOSFET L2 Linear Power MOSFET | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 11 mOhms | 4.5 V | 540 nC | Enhancement | Linear L2 | |||
|
|
420
In-stock
|
IXYS | MOSFET -170.0 Amps -100V 0.012 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 170 A | 12 mOhms | |||||||
|
|
221
In-stock
|
IXYS | MOSFET 140 Amps 300V 0.024 Ohms Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 140 A | 24 mOhms | Enhancement | HyperFET | |||||
|
|
499
In-stock
|
IXYS | MOSFET -90.0 Amps -200V 0.044 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 90 A | 44 mOhms | |||||||
|
|
80
In-stock
|
IXYS | MOSFET -40.0 Amps -500V 0.230 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 40 A | 230 mOhms | |||||||
|
|
1,020
In-stock
|
IXYS | MOSFET 180A 250V | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 180 A | 12.9 mOhms | 5 V | 345 nC | Enhancement | GigaMOS | |||
|
|
18
In-stock
|
IXYS | MOSFET 90 Amps 250V | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | 4.5 V | 640 nC | Enhancement | LinearL2 | |||
|
|
46
In-stock
|
IXYS | MOSFET 160A 300V | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 160 A | 19 mOhms | 5 V | 335 nC | Enhancement | ||||
|
|
8,000
In-stock
|
IXYS | MOSFET 82 Amps 250V 0.035 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 82 A | 35 mOhms | 5 V | 142 nC | Enhancement | PolarHT | |||
|
|
25
In-stock
|
IXYS | MOSFET 85 Amps 600V 36 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 85 A | 30 mOhms | 4 V | 500 nC | Enhancement | CoolMOS | |||
|
|
40
In-stock
|
IXYS | MOSFET DIODE Id44 BVdass600 | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 44 A | 130 mOhms | Enhancement | HyperFET | |||||
|
|
47
In-stock
|
IXYS | MOSFET 102 Amps 300V 0.033 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 102 A | 33 mOhms | 5 V | 224 nC | Enhancement | PolarHT | |||
|
|
10
In-stock
|
IXYS | MOSFET 47 Amps 600V | 20 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 600 V | 47 A | 45 mOhms | Enhancement | CoolMOS | |||||
|
|
22
In-stock
|
IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | Enhancement | ||||||
|
|
10
In-stock
|
IXYS | MOSFET Polar Power MOSFET | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 140 A | 20 mOhms | 5 V | 185 nC | Enhancement | Polar | |||
|
|
15
In-stock
|
IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | Enhancement | ||||||
|
|
1
In-stock
|
IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | Polar, HiPerFET | |||
|
|
31
In-stock
|
Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 600 V | 94 A | 30 mOhms | 3 V | 505 nC | Enhancement | |||||
|
|
66
In-stock
|
Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 800 V | 34 A | 125 mOhms | 3 V | 180 nC | Enhancement | |||||
|
|
20
In-stock
|
IXYS | MOSFET 800V 34A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 34 A | 240 mOhms | Enhancement | HyperFET | |||||
|
|
25
In-stock
|
IXYS | MOSFET 100V 180A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 8 mOhms | Enhancement | HyperFET | |||||
|
|
8,000
In-stock
|
IXYS | MOSFET 102 Amps 300V 0.033 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 102 A | 33 mOhms | 5 V | 224 nC | Enhancement | PolarHT, HiPerFET | |||
|
|
25
In-stock
|
IXYS | MOSFET 120A 300V | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 120 A | 24 mOhms | 5 V | 265 nC | Enhancement | GigaMOS | |||
|
|
175
In-stock
|
IXYS | MOSFET LINEAR L2 SERIES MOSFET 200V 110A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 110 A | 24 mOhms | 4.5 V | 500 nC | Enhancement | LinearL2 | |||
|
|
VIEW | IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | 4.5 V | 170 nC | Enhancement | HyperFET | |||
|
|
VIEW | IXYS | MOSFET 21 Amps 100V 0.55 Ohm Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 21 A | 550 mOhms | Enhancement | ||||||
|
|
VIEW | IXYS | MOSFET -32 Amps -600V 0.350 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 600 V | - 32 A | 350 mOhms | - 4 V | 196 nC | Enhancement | PolarP | ||||
|
|
VIEW | IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 250V 140A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 140 A | 17 mOhms | 5 V | 255 nC | Enhancement | GigaMOS | |||
|
|
40
In-stock
|
IXYS | MOSFET DIODE Id48 BVdass500 | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 48 A | 100 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 62 Amps 250V 0.035 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 62 A | 35 mOhms | Enhancement |
