- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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18,400
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 160 A | 2.4 mOhms | 1.8 V | 35 nC | Directfet | ||||
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346
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 160 A | 3.2 mOhms | 1.35 V to 2.35 V | 35 nC | Enhancement |
