- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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11,841
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.9 A | 240 mOhms | - 1 V | 4.6 nC | Enhancement | |||
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9,808
In-stock
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Toshiba | MOSFET Small Signal MOSFET | +/- 8 V | SMD/SMT | SOT-723-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 800 mA | 4 Ohms | - 300 mV | 1.6 nC | Enhancement | ||||
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2,389
In-stock
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Toshiba | MOSFET Small-signal MOSFET P-Channel | +/- 8 V | SMD/SMT | UFM-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.5 A | 24.9 mOhms | - 1 V | 12.8 nC | Enhancement | ||||
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8,392
In-stock
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Toshiba | MOSFET Nch MOSFET | +/- 8 V | SMD/SMT | CST3-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.4 A | 4 Ohms | - 1 V | 1.6 nC | Enhancement | |||
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12,443
In-stock
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Toshiba | MOSFET Small Signal MOSFET | +/- 8 V | SMD/SMT | SOT-416-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 330 mA | 3.6 Ohms | - 300 mV | 1.2 nC | Enhancement |
