- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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9,600
In-stock
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Diodes Incorporated | MOSFET P-CH ENHANCEMENT MODE MOSFET | +/- 8 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 50 V | - 200 mA | 6 Ohms | - 1.2 V | 580 pC | Enhancement | |||||
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4,227
In-stock
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Diodes Incorporated | MOSFET P-CH ENHANCEMENT 6Ohm -50V -200mA | +/- 8 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 50 V | - 200 mA | 6 Ohms | - 1.2 V | 580 pC | Enhancement | |||||
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2,478
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3 T&R 3K | +/- 8 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.14 A | 495 mOhms | - 1.2 V | 1.5 nC | Enhancement | ||||
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46
In-stock
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Fairchild Semiconductor | MOSFET 20V P-Channel 1.5V Specfied PowerTrench | +/- 8 V | SMD/SMT | WLCSP-4 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 143 mOhms | - 1.2 V | 15 nC | PowerTrench | |||||
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161,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 120 mOhms | - 1.2 V | 5.5 nC | Enhancement |
