- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
10,315
In-stock
|
Fairchild Semiconductor | MOSFET 20V Complementary PowerTrench | +/- 8 V | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 3.4 A | 66 mOhms, 142 mOhms | 0.7 V, - 0.6 V | 3 nC, 5.5 nC | PowerTrench | |||
|
|
GET PRICE |
2,897
In-stock
|
Diodes Incorporated | MOSFET Comp ENH Mode FET 12V Vdss 8V VGss | +/- 8 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | - 12 V, 12 V | - 3.8 A, 5.6 A | 29 mOhms, 61 mOhms | - 1 V, 1 V | 10.5 nC, 10.7 nC | Enhancement |
