- Manufacture :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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64,130
In-stock
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Nexperia | MOSFET 30V P-Channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1 A | 430 mOhms | - 950 mV | 1.4 nC | Enhancement | ||||
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6,618
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 X2-DFN1006-3 T&R 10K | +/- 8 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 760 mA | 450 mOhms | - 1.1 V | 1.5 nC | Enhancement | ||||
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14,459
In-stock
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Nexperia | MOSFET 30V Dual N-Channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1010B-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 590 mA | 670 mOhms | 450 mV | 1.05 mC | Enhancement |