- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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161,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 120 mOhms | - 1.2 V | 5.5 nC | Enhancement | ||||
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2,580
In-stock
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Texas instruments | MOSFET 20V P-channel NexFET Pwr MOSFET | +/- 8 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 27 mOhms | - 1.15 V | 4.4 nC | Enhancement | NexFET | |||
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8,036
In-stock
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onsemi | MOSFET PCH 1.8V Power MOSFE | +/- 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3 A | 215 mOhms | - 1.4 V | 5.6 nC | Enhancement |
