- Manufacture :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,670
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET PD 0.24W MIN RDSon | +/- 8 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 650 mA | 495 mOhms | - 700 mV | 1.5 nC | Enhancement | |||
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1,773
In-stock
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Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 500 mA | 1.02 Ohms | - 700 mV | 1.19 nC | Enhancement | |||
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6,850
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET Pd .43W -8Vgss -5.0A | +/- 8 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 770 mA | 960 mOhms | - 700 mV | 1.5 nC | Enhancement |