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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
SQ2301ES-T1_GE3
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RFQ
12,192
In-stock
Siliconix / Vishay MOSFET P-Channel 20V AEC-Q101 Qualified +/- 8 V SMD/SMT SOT-23-3 - 55 C + 175 C Reel 1 Channel Si P-Channel - 20 V - 3.9 A 0.08 Ohms - 1.5 V 8 nC Enhancement TrenchFET
SQ2310ES-T1_GE3
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RFQ
24,412
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Vishay Semiconductors MOSFET 20V 6A 2W AEC-Q101 Qualified +/- 8 V SMD/SMT TO-236-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 20 V 6 A 0.024 Ohms 0.4 V 8.5 nC Enhancement TrenchFET
SQJ401EP-T1_GE3
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RFQ
3,000
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Siliconix / Vishay MOSFET P-Channel 12V AEC-Q101 Qualified +/- 8 V SMD/SMT PowerPAK-SO-8L-4 - 55 C + 175 C Reel 1 Channel Si P-Channel - 12 V - 32 A 0.005 Ohms - 1.5 V 164 nC Enhancement TrenchFET
SQS405EN-T1_GE3
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RFQ
2,805
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Siliconix / Vishay MOSFET P-Channel 12V AEC-Q101 Qualified +/- 8 V SMD/SMT PowerPAK-1212-8 - 55 C + 175 C Reel 1 Channel Si P-Channel - 12 V - 16 A 0.014 Ohms - 1 V 75 nC Enhancement TrenchFET
SQS420EN-T1_GE3
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RFQ
3,000
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Vishay Semiconductors MOSFET 20V 8A 18W AEC-Q101 Qualified +/- 8 V SMD/SMT PowerPAK-1212-8 - 55 C + 175 C Reel 1 Channel Si N-Channel 20 V 8 A 0.0235 Ohms 0.45 V 14 nC Enhancement TrenchFET
SQ3460EV-T1_GE3
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RFQ
2,870
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Vishay Semiconductors MOSFET 20V 8A 3.6W AEC-Q101 Qualified +/- 8 V SMD/SMT TSOP-6 - 55 C + 175 C Reel 1 Channel Si N-Channel 20 V 8 A 0.025 Ohms 0.4 V 14 nC Enhancement TrenchFET
SQ2315ES-T1_GE3
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RFQ
648
In-stock
Siliconix / Vishay MOSFET P-Channel 12V AEC-Q101 Qualified +/- 8 V SMD/SMT SOT-23-3 - 55 C + 175 C Reel 1 Channel Si P-Channel - 12 V - 5 A 0.042 Ohms - 1 V 13 nC Enhancement TrenchFET
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