- Package / Case :
-
- CST3-3 (1)
- DFN1006-3 (2)
- DFN1006B-3 (1)
- DFN1010B-6 (1)
- DFN1010D-3 (1)
- DSBGA-6 (1)
- MicroFET-6 (1)
- MicroFoot-4 (1)
- Picostar-3 (1)
- PowerDI3333-8 (1)
- PowerPAK-1212-8 (3)
- PowerPAK-SO-8L-4 (2)
- SO-8 (2)
- SOT-23-3 (6)
- SOT-323-3 (1)
- SOT-416-3 (1)
- SOT-523-3 (1)
- SOT-723-3 (1)
- TO-236-3 (1)
- TSOP-6 (3)
- TSOT-26-6 (3)
- U-DFN2020-E-6 (2)
- U-DFN2020-F-6 (3)
- uDFN-6 (3)
- UFM-3 (1)
- WLCSP-4 (2)
- X1-DFN1006-3 (1)
- X1-DFN1212-3 (2)
- X1-DFN1616-6 (1)
- X2-DFN1006-3 (1)
- X2-DFN2015-3 (4)
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 1 A (1)
- - 1.14 A (1)
- - 1.4 A (3)
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- - 3.5 A (1)
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- - 3.9 A (2)
- - 32 A (1)
- - 330 mA (1)
- - 4.2 A (1)
- - 4.23 A (1)
- - 4.5 A (2)
- - 4.9 A (1)
- - 5 A (1)
- - 5.5 A (2)
- - 500 mA (1)
- - 590 mA (1)
- - 6.6 A (1)
- - 6.7 A (1)
- - 60 A (1)
- - 600 mA (1)
- - 650 mA (1)
- - 7 A (2)
- - 7.3 A (1)
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- - 770 mA (1)
- - 8 A (2)
- - 8.2 A (1)
- - 800 mA (1)
- - 9 A (2)
- - 9.7 A (1)
- 6 A (1)
- 8 A (2)
- Rds On - Drain-Source Resistance :
-
- 0.005 Ohms (1)
- 0.0051 Ohms (1)
- 0.013 Ohms (1)
- 0.014 Ohms (2)
- 0.017 Ohms (1)
- 0.02 Ohms (1)
- 0.021 Ohms (1)
- 0.0235 Ohms (1)
- 0.024 Ohms (1)
- 0.025 Ohms (1)
- 0.042 Ohms (1)
- 0.08 Ohms (1)
- 1.02 Ohms (1)
- 120 mOhms (1)
- 14.6 mOhms (1)
- 143 mOhms (1)
- 19 mOhms (2)
- 20 mOhms (1)
- 215 mOhms (1)
- 22 mOhms (2)
- 24 mOhms (2)
- 24.9 mOhms (1)
- 240 mOhms (1)
- 25 mOhms (2)
- 26 mOhms (1)
- 27 mOhms (2)
- 3.6 Ohms (1)
- 31 mOhms (1)
- 36 mOhms (1)
- 4 Ohms (2)
- 4.8 mOhms (1)
- 40 mOhms (1)
- 430 mOhms (1)
- 45 mOhms (2)
- 450 mOhms (1)
- 495 mOhms (2)
- 55 mOhms (1)
- 65 mOhms (1)
- 66 mOhms (1)
- 670 mOhms (1)
- 700 mOhms (1)
- 8 mOhms (1)
- 87 mOhms (1)
- 940 mOhms (1)
- 950 mOhms (1)
- 960 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 1.05 mC (1)
- 1.19 nC (1)
- 1.2 nC (1)
- 1.3 nC (1)
- 1.35 nC (1)
- 1.4 nC (1)
- 1.5 nC (4)
- 1.6 nC (2)
- 10 nC (3)
- 10.2 nC (1)
- 12.8 nC (1)
- 13 nC (1)
- 14 nC (2)
- 14.4 nC (1)
- 15 nC (1)
- 15.8 nC (2)
- 150 nC (1)
- 151 nC (1)
- 164 nC (1)
- 23.7 nC (1)
- 25 nC (1)
- 27 nC (1)
- 28 nC (2)
- 28.2 nC (1)
- 29 nC (1)
- 30 nC (1)
- 38 nC (1)
- 4.4 nC (1)
- 4.6 nC (1)
- 4.8 nC (1)
- 48.7 nC (1)
- 5.5 nC (1)
- 5.6 nC (1)
- 52.2 nC (1)
- 59 nC (2)
- 6.8 nC (1)
- 7.6 nC (1)
- 72 nC (1)
- 75 nC (2)
- 8 nC (1)
- 8.5 nC (1)
- 800 pC (1)
- 81 nC (1)
- 9.1 nC (1)
- Tradename :
- Applied Filters :
55 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,997
In-stock
|
Vishay Semiconductors | MOSFET -12V Vds -60A Id AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 60 A | 4.8 mOhms | - 1.5 V | 150 nC | Enhancement | ||||
|
|
6,000
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 20V MICRO FOOT | +/- 8 V | SMD/SMT | MicroFoot-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9.7 A | 0.017 Ohms | - 0.9 V | 81 nC | Enhancement | ||||
|
|
12,192
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 20V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.9 A | 0.08 Ohms | - 1.5 V | 8 nC | Enhancement | TrenchFET | |||
|
|
25,410
In-stock
|
Fairchild Semiconductor | MOSFET 20V Single P Channel PowerTrench Mosfet | +/- 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.8 A | 45 mOhms | - 1.5 V | 30 nC | PowerTrench | ||||
|
|
24,412
In-stock
|
Vishay Semiconductors | MOSFET 20V 6A 2W AEC-Q101 Qualified | +/- 8 V | SMD/SMT | TO-236-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6 A | 0.024 Ohms | 0.4 V | 8.5 nC | Enhancement | TrenchFET | |||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 12V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 32 A | 0.005 Ohms | - 1.5 V | 164 nC | Enhancement | TrenchFET | |||
|
|
3,871
In-stock
|
Diodes Incorporated | MOSFET P-Ch -20V Enh FET 8Vgss 0.73W 2760pF | +/- 8 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9 A | 22 mOhms | - 350 mV | 59 nC | Enhancement | ||||
|
|
2,805
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 12V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 16 A | 0.014 Ohms | - 1 V | 75 nC | Enhancement | TrenchFET | |||
|
|
3,000
In-stock
|
Vishay Semiconductors | MOSFET 20V 8A 18W AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8 A | 0.0235 Ohms | 0.45 V | 14 nC | Enhancement | TrenchFET | |||
|
|
2,870
In-stock
|
Vishay Semiconductors | MOSFET 20V 8A 3.6W AEC-Q101 Qualified | +/- 8 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8 A | 0.025 Ohms | 0.4 V | 14 nC | Enhancement | TrenchFET | |||
|
|
648
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 12V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5 A | 0.042 Ohms | - 1 V | 13 nC | Enhancement | TrenchFET | |||
|
|
2,623
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 8 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.4 A | 87 mOhms | 400 mV | 4.8 nC | Enhancement | |||||
|
|
4,670
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh FET PD 0.24W MIN RDSon | +/- 8 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 650 mA | 495 mOhms | - 700 mV | 1.5 nC | Enhancement | ||||
|
|
5,684
In-stock
|
Nexperia | MOSFET 20 V, P-channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.9 A | 950 mOhms | - 400 mV | 6.8 nC | Enhancement | ||||
|
|
64,130
In-stock
|
Nexperia | MOSFET 30V P-Channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1 A | 430 mOhms | - 950 mV | 1.4 nC | Enhancement | ||||
|
|
2,482
In-stock
|
onsemi | MOSFET PFET UDFN 20V 8.2A 18MOHM | +/- 8 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8.2 A | 14.6 mOhms | - 1 V | 28 nC | Enhancement | ||||
|
|
1,257
In-stock
|
Diodes Incorporated | MOSFET 20V P-CH MOSFET | +/- 8 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 14 A | 8 mOhms | - 1 V | 72 nC | Enhancement | ||||
|
|
2,576
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh FET 8Vgss -20Vdss -40A | +/- 8 V | SMD/SMT | X1-DFN1616-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.6 A | 19 mOhms | - 1 V | 29 nC | Enhancement | ||||
|
|
6,618
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 X2-DFN1006-3 T&R 10K | +/- 8 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 760 mA | 450 mOhms | - 1.1 V | 1.5 nC | Enhancement | ||||
|
|
2,478
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3 T&R 3K | +/- 8 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.14 A | 495 mOhms | - 1.2 V | 1.5 nC | Enhancement | ||||
|
|
1,773
In-stock
|
Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 500 mA | 1.02 Ohms | - 700 mV | 1.19 nC | Enhancement | ||||
|
|
14,459
In-stock
|
Nexperia | MOSFET 30V Dual N-Channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1010B-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 590 mA | 670 mOhms | 450 mV | 1.05 mC | Enhancement | ||||
|
|
1,564
In-stock
|
Diodes Incorporated | MOSFET MOSFET P-CHAN. | +/- 8 V | SMD/SMT | X2-DFN2015-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 36 mOhms | - 1 V | 9.1 nC | Enhancement | ||||
|
|
2,968
In-stock
|
Diodes Incorporated | MOSFET P-Ch -16V Enh FET 8Vgss -12A 0.65W | +/- 8 V | SMD/SMT | X2-DFN2015-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 16 V | - 2.5 A | 65 mOhms | - 1 V | 10 nC | Enhancement | ||||
|
|
6,850
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh FET Pd .43W -8Vgss -5.0A | +/- 8 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 770 mA | 960 mOhms | - 700 mV | 1.5 nC | Enhancement | ||||
|
|
2,880
In-stock
|
Diodes Incorporated | MOSFET 20V P-CH MOSFET | +/- 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.23 A | 45 mOhms | - 900 mV | 7.6 nC | Enhancement | ||||
|
|
2,970
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 X2-DFN2020-6 T&R 3K | +/- 8 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 7.3 A | 19 mOhms | - 1 V | 28.2 nC | Enhancement | ||||
|
|
2,340
In-stock
|
Diodes Incorporated | MOSFET FET BVDSS 8V 24V P-Ch 4.5A 45Vgs 1496 | +/- 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.5 A | 25 mOhms | - 1.5 V | 14.4 nC | Enhancement | ||||
|
|
46
In-stock
|
Fairchild Semiconductor | MOSFET 20V P-Channel 1.5V Specfied PowerTrench | +/- 8 V | SMD/SMT | WLCSP-4 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 143 mOhms | - 1.2 V | 15 nC | PowerTrench | |||||
|
|
161,000
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 120 mOhms | - 1.2 V | 5.5 nC | Enhancement |
