- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,478
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3 T&R 3K | +/- 8 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.14 A | 495 mOhms | - 1.2 V | 1.5 nC | Enhancement | ||
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80
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 1.0Ohm -20V -600mA | +/- 8 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 600 mA | 700 mOhms | - 1 V | 800 pC | Enhancement |
