- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,576
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET 8Vgss -20Vdss -40A | +/- 8 V | SMD/SMT | X1-DFN1616-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.6 A | 19 mOhms | - 1 V | 29 nC | Enhancement | |||
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2,970
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 X2-DFN2020-6 T&R 3K | +/- 8 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 7.3 A | 19 mOhms | - 1 V | 28.2 nC | Enhancement |
