- Manufacture :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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60
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 8 V | SMD/SMT | X2-DFN2015-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5.5 A | 26 mOhms | - 1 V | 23.7 nC | Enhancement | ||||
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9,179
In-stock
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Texas instruments | MOSFET P-Channel MOSFET | +/- 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.5 A | 66 mOhms | - 1.1 V | 1.35 nC | Enhancement | NexFET | |||
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8,870
In-stock
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Nexperia | MOSFET 12V P-Channel Trench MOSFET | +/- 8 V | SMD/SMT | WLCSP-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4.9 A | 55 mOhms | - 900 mV | 10 nC | Enhancement | ||||
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30,000
In-stock
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onsemi | MOSFET PFET UDFN 12V 7A 24MOHM | +/- 8 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 7 A | 24 mOhms | - 1 V | 15.8 nC | Enhancement | ||||
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24,000
In-stock
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onsemi | MOSFET PFET UDFN 12V 7A 24MOHM | +/- 8 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 7 A | 24 mOhms | - 1 V | 15.8 nC | Enhancement | ||||
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8,036
In-stock
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onsemi | MOSFET PCH 1.8V Power MOSFE | +/- 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3 A | 215 mOhms | - 1.4 V | 5.6 nC | Enhancement |
