- Manufacture :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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8,645
In-stock
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Fairchild Semiconductor | MOSFET 20V Dual P-Channel PowerTrench | +/- 8 V | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 2.3 A | 95 mOhms | - 0.6 V | 5.5 nC | PowerTrench | ||||
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9,963
In-stock
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Nexperia | MOSFET 20 V, dual P-channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 1.4 A | 940 mOhms | - 450 mV | 1.3 nC | Enhancement | ||||
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10,315
In-stock
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Fairchild Semiconductor | MOSFET 20V Complementary PowerTrench | +/- 8 V | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 3.4 A | 66 mOhms, 142 mOhms | 0.7 V, - 0.6 V | 3 nC, 5.5 nC | PowerTrench | ||||
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2,897
In-stock
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Diodes Incorporated | MOSFET Comp ENH Mode FET 12V Vdss 8V VGss | +/- 8 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | - 12 V, 12 V | - 3.8 A, 5.6 A | 29 mOhms, 61 mOhms | - 1 V, 1 V | 10.5 nC, 10.7 nC | Enhancement |
